
20
JANUARY 2009
www.samsung.com/semi/sram
AsycnhronousSRAM
HIGH-SPEED ASYNCHRONOUS SRAM
Density Organization Part Number # Pins-Package Vcc (V) Speed (ns) Operaring
Temp
Operating
Current (mA)
Operating
Current (mA)
Production
Status
4Mb
256Kx16
K6R4016C1D 44-SOJ, 44-TSOP2 5 10 I 65, 55 20, 5 Mass Production
K6R4016V1D 44-SOJ, 44-TSOP2 3.3 10 I 80, 65 20, 5 (1.2) Mass Production
1Mx4
K6R4004C1D 32-SOJ 5 10, 12 I 65, 55 20, 5 EOL
K6R4004V1D 32-SOJ 3.3 8, 10 I 80, 65 20, 5 EOL
512Kx8
K6R4008C1D 36-SOJ, 44-TSOP2 5 10 I 65, 55 20, 5 Mass Production
K6R4008V1D 36-SOJ, 44-TSOP2 3.3 10 I 80, 65 20, 5 Mass Production
LOW POWER ASYNCHRONOUS SRAM
Type Density Organization Part Number # Pins-Package Vcc (V) Speed (ns) Temp Current
(mA)
Current
(uA)
Production
Status
UtRAM 64Mb
4Mx16 K1S6416BCE 48-FBGA 1.8 70 I 40 180 2Q'09
4Mx16 K1S64161CE 48-FBGA 3.0 70 I 40 180 2Q'09
4Mx16 K1B6416B2E 54-FBGA 1.8 104Mhz I 40 180 2Q'09
UtRAM2 64Mb
4Mx16 K1C6416B2E 54-FBGA 1.8 104Mhz I 40 180 2Q'09
4Mx16 K1C6416B8E 54-FBGA 1.8 104Mhz I 40 180 2Q'09
UtRAM 32Mb
2Mx16 K1S3216BCF 48-FBGA 1.8 70 I 35 120 3Q'09
2Mx16 K1S32161CF 48-FBGA 3.0 70 I 35 100 3Q'09
2Mx16 K1B3216B2F 54-FBGA 1.8 104Mhz I 35 100 3Q'09
UtRAM2 32Mb
2Mx16 K1C3216B2F 54-FBGA 1.8 104Mhz I 35 100 3Q'09
2Mx16 K1C3216B8F 54-FBGA 1.8 104Mhz I 35 100 3Q'09
UtRAM 16Mb
1Mx16 K1S1616B1C 48-FBGA 1.8 70 I 35 80 3Q'09
1Mx16 K1S161611C 48-FBGA 3.0 70 I 35 95 3Q'09
UtRAM2 16Mb
1Mx16 K1C1616B2C 54-FBGA 1.8 104Mhz I 35 100 3Q'09
1Mx16 K1C1616B8C 54-FBGA 1.8 104Mhz I 35 100 3Q'09
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